AFGY160T65SPD-B4
ONSEMI
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionIGBT 650V, 160A Field Stop Trench IGBT Automotive AEC-Q101
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-247
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- J-STD-609 Codee3
- VCEsat-Max (V)2.05
- Terminal FinishMatte Tin (Sn) - annealed
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)882
- Transistor Element MaterialSILICON
- Gate-emitter Voltage-Max (V)20
- Collector Current-Max (IC) (A)240
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-55
- Gate-emitter Thr Voltage-Max (V)6.3
- Collector-emitter Voltage-Max (V)650
- Screening Level / Reference StandardAEC-Q101
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AFGY160T65SPD-B4