3SK292(TE85R,F)
Toshiba Corporation
- Lifecycle statusEOL
- RoHSRoHS compliant
- DescriptionMOSFET N-CH 12.5 30MA SMQ
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G4
- ConfigurationN-Channel Dual Gate
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeDUAL GATE, DEPLETION MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals4
- Power Gain-Min (Gp)23.5 dB
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.03 A
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- Feedback Cap-Max (Crss)0.04 pF
- DS Breakdown Voltage-Min12.5 V
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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3SK292(TE85R,F)