3SK292
Toshiba Corporation
- Lifecycle statusEOL
- RoHSRoHS compliant
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.95
- SB Code8541.21.00.80
- JESD-30 CodeR-PDSO-G4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeDUAL GATE, DEPLETION MODE
- Case ConnectionSOURCE
- Terminal PositionDUAL
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals4
- Power Gain-Min (Gp)23.5 dB
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.03 A
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- Feedback Cap-Max (Crss)0.04 pF
- DS Breakdown Voltage-Min12.5 V
- Operating Temperature-Max125 Cel
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Power Dissipation Ambient-Max0.15 W
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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3SK292