2SK2496
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, Junction FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-CQSO-G4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyJUNCTION
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal PositionQUAD
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.08 A
- Highest Frequency BandKA BAND
- Transistor ApplicationAMPLIFIER
- Operating Temperature-Max125 Cel
- Transistor Element MaterialGALLIUM ARSENIDE
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2SK2496