2SK241-O
Toshiba Corporation
- Lifecycle statusActive-Unconfirmed
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeDEPLETION MODE
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.03 A
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- Feedback Cap-Max (Crss)0.05 pF
- DS Breakdown Voltage-Min20 V
- Operating Temperature-Max125 Cel
- Power Dissipation-Max (Abs)0.2 W
- Transistor Element MaterialSILICON
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