2SK2331TE12R
Toshiba Corporation
- Lifecycle statusActive
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PQSO-G4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyJUNCTION
- J-STD-609 Codee0
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionQUAD
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandX BAND
- Power Gain-Min (Gp) (dB)10
- Drain Current-Max (ID) (A)0.12
- Transistor Element MaterialGALLIUM ARSENIDE
- Operating Temperature-Max (Cel)125
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2SK2331TE12R