2SK2173(F)
Toshiba Corporation
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionTrans MOSFET N-CH Si 60V 50A 3-Pin(3+Tab) TO-3PN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)50 A
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)550 pF
- DS Breakdown Voltage-Min60 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)125 W
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)683 mJ
- Drain-source On Resistance-Max0.025 ohm
- Pulsed Drain Current-Max (IDM)200 A
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2SK2173(F)
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2SK2173(F)