2SK1118
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 6A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationSWITCHING
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-220AB
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)45
- Drain Current-Max (ID) (A)6
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)80
- DS Breakdown Voltage-Min (V)600
- Feedback Cap-Max (Crss) (pF)120
- Turn-off Time-Max (toff) (ns)170
- Operating Temperature-Max (Cel)150
- Power Dissipation Ambient-Max (W)45
- Pulsed Drain Current-Max (IDM) (A)24
- Drain-source On Resistance-Max (ohm)1.25
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2SK1118