2SJ509
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionSmall Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-PBCY-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID)1 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min100 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)0.9 W
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max2.5 ohm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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2SJ509