2SD1803S-E
ONSEMI
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionTrans GP BJT NPN 50V 5A 1000mW 3-Pin(3+Tab) IPAK Bag
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- ApplicationSWITCHING
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- J-STD-609 Codee6
- VCEsat-Max (V)0.55
- Case ConnectionCOLLECTOR
- Terminal FinishTin/Bismuth (Sn/Bi)
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypePNP
- DC Current Gain-Min (hFE)35
- Power Dissipation-Max (W)20
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Collector Current-Max (IC) (A)5
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)50
- Power Dissipation Ambient-Max (W)1
- Collector-base Capacitance-Max (pF)60
- Transition Frequency-Nom (fT) (MHz)130
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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2SD1803S-E