2SD1222
Toshiba Corporation
- Lifecycle statusEOL
- DescriptionSmall Signal Bipolar Transistor, 3A I(C), NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-G2
- ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- VCEsat-Max (V)1.5
- Case ConnectionCOLLECTOR
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- DC Current Gain-Min (hFE)1000
- Power Dissipation-Max (W)15
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)3
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)40
- Power Dissipation Ambient-Max (W)1
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2SD1222