2SC5111F-Y by Toshiba Corporation | Sourcengine

Toshiba Corporation 2SC5111F-Y

Lifecycle status
Active
Description
RF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
Category
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-F3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
J-STD-609 Code
e0
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
120
Power Dissipation-Max (W)
0.1
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.06
Operating Temperature-Max (Cel)
125
Collector-emitter Voltage-Max (V)
10
Collector-base Capacitance-Max (pF)
0.9
Transition Frequency-Nom (fT) (MHz)
6000