2SC5084-O(TE85L,F)
Toshiba Corporation
- Lifecycle statusEOL
- RoHSRoHS compliant
- DescriptionBipolar Transistors - BJT pb-f mm s-mini,active,
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Terminal PositionDUAL
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)80
- Operating Temperature-Max125 Cel
- Collector Current-Max (IC)0.08 A
- Power Dissipation-Max (Abs)0.15 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max12 V
- Transition Frequency-Nom (fT)7000 MHz
- Collector-base Capacitance-Max1.15 pF
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2SC5084-O(TE85L,F)