2SC4843
Toshiba Corporation
- Lifecycle statusActive-Unconfirmed
- DescriptionRF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Terminal PositionDUAL
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)50
- Operating Temperature-Max125 Cel
- Collector Current-Max (IC)0.04 A
- Power Dissipation-Max (Abs)0.1 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max10 V
- Peak Reflow Temperature (Cel)240
- Transition Frequency-Nom (fT)10000 MHz
- Collector-base Capacitance-Max0.9 pF
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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2SC4843