2SC4250FV
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PDSO-F3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- DC Current Gain-Min (hFE)40
- Power Dissipation-Max (W)0.15
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)0.05
- Operating Temperature-Max (Cel)125
- Collector-emitter Voltage-Max (V)20
- Collector-base Capacitance-Max (pF)0.6
- Transition Frequency-Nom (fT) (MHz)1400
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2SC4250FV
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2SC4250FV