2SC2982-B
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionSmall Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- VCEsat-Max0.5 V
- JESD-30 CodeR-PSSO-F3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- Case ConnectionCOLLECTOR
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)200
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)2 A
- Power Dissipation-Max (Abs)0.5 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max10 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Power Dissipation Ambient-Max1 W
- Transition Frequency-Nom (fT)150 MHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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2SC2982-B