2SC2879
Toshiba Corporation
- Lifecycle statusContact Mfr
- DescriptionTrans RF BJT NPN 18V 25A 4-Pin 2-13B1A
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- JESD-30 CodeO-CRFM-F4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- Terminal PositionRADIAL
- Number of Elements1
- Number of Terminals4
- Power Gain-Min (Gp)13 dB
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeNPN
- Highest Frequency BandHIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)10
- Operating Temperature-Max175 Cel
- Collector Current-Max (IC)25 A
- Power Dissipation-Max (Abs)250 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max18 V
- Power Dissipation Ambient-Max250 W
- Transition Frequency-Nom (fT)100 MHz
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2SC2879