2SC2713BLTE85L
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionBipolar Transistors - BJT s-mini pln(lf),discon(07-10)/phase-out(09-07)/obsolete(10-04),
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max0.3 V
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-236
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Terminal PositionDUAL
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)350
- Operating Temperature-Max125 Cel
- Collector Current-Max (IC)0.1 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max120 V
- Transition Frequency-Nom (fT)100 MHz
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2SC2713BLTE85L