2SC2106
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionRF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeO-CRPM-F4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StylePOST/STUD MOUNT Meter
- Surface MountNO
- Terminal FormFLAT
- DLA QualificationNot Qualified
- Terminal PositionRADIAL
- Number of Elements1
- Number of Terminals4
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Power Gain-Min (Gp) (dB)6
- DC Current Gain-Min (hFE)10
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)2.8
- Collector-emitter Voltage-Max (V)17
- Power Dissipation Ambient-Max (W)30
- Collector-base Capacitance-Max (pF)45
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2SC2106
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2SC2106