2SC1001
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionRF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-39
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeO-MBCY-W3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-39
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- J-STD-609 Codee0
- Case ConnectionEMITTER
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Power Gain-Min (Gp) (dB)6
- DC Current Gain-Min (hFE)20
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)0.5
- Collector-emitter Voltage-Max (V)20
- Power Dissipation Ambient-Max (W)5
- Collector-base Capacitance-Max (pF)10
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2SC1001