2SB1594-B
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionPower Bipolar Transistor, 10A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- VCEsat-Max3 V
- JESD-30 CodeR-PSFM-T3
- ConfigurationDARLINGTON WITH BUILT-IN RESISTOR
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Case ConnectionCOLLECTOR
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypePNP
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)5000
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)10 A
- Power Dissipation-Max (Abs)150 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max160 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Power Dissipation Ambient-Max150 W
- Transition Frequency-Nom (fT)30 MHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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2SB1594-B