2SB1203T-TL-E
ONSEMI
- Lifecycle statusEOL
- RoHSRoHS compliant
- DescriptionTrans GP BJT PNP 50V 5A 3-Pin(2+Tab) TP-FA T/R
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- VCEsat-Max0.4 V
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE
- JESD-609 Codee6
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Case ConnectionCOLLECTOR
- Terminal FinishTIN BISMUTH
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Transistor ApplicationSWITCHING
- DC Current Gain-Min (hFE)35
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)5 A
- Moisture Sensitivity Level1
- Power Dissipation-Max (Abs)20 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max50 V
- Peak Reflow Temperature (Cel)260
- Power Dissipation Ambient-Max1 W
- Transition Frequency-Nom (fT)180 MHz
- Collector-base Capacitance-Max40 pF
- Time@Peak Reflow Temperature-Max (s)30
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