2SA1953-A by Toshiba Corporation | Sourcengine

Toshiba Corporation 2SA1953-A

Lifecycle status
EOL
Description
Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
Category
Semiconductors Transistors Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
JEDEC-95 Code
TO-236
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
300
Operating Temperature-Max
125 Cel
Collector Current-Max (IC)
0.5 A
Power Dissipation-Max (Abs)
0.15 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
12 V
Peak Reflow Temperature (Cel)
240
Transition Frequency-Nom (fT)
130 MHz
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED