2SA1620-O
Toshiba Corporation
- Lifecycle statusEOL
- DescriptionSmall Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max0.4 V
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-236
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Terminal FinishTIN LEAD
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypePNP
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)70
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)0.3 A
- Power Dissipation-Max (Abs)0.2 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max80 V
- Transition Frequency-Nom (fT)100 MHz
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2SA1620-O