2SA1416T-TD-E
ONSEMI
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionTrans GP BJT PNP 100V 1A 1300mW 4-Pin(3+Tab) SOT-89 T/R
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-F3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- J-STD-609 Codee6
- VCEsat-Max (V)0.6
- Case ConnectionCOLLECTOR
- Terminal FinishTin/Bismuth (Sn/Bi)
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypePNP
- DC Current Gain-Min (hFE)200
- Power Dissipation-Max (W)1.3
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)260
- Collector Current-Max (IC) (A)1
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)100
- Power Dissipation Ambient-Max (W)0.5
- Collector-base Capacitance-Max (pF)13
- Transition Frequency-Nom (fT) (MHz)120
- Time@Peak Reflow Temperature-Max (s)30
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2SA1416T-TD-E