2N7002HWX
Nexperia BV
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- Description60 V, N-channel Trench MOSFET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G3
- ConfigurationSingle
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishTin (Sn)
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)0.83
- Drain Current-Max (ID) (A)0.31
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)60
- Feedback Cap-Max (Crss) (pF)4
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Drain-source On Resistance-Max (ohm)1.6
- Screening Level / Reference StandardIEC-60134
- Time@Peak Reflow Temperature-Max (s)40
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2N7002HWX