2A200HB12C2F by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG 2A200HB12C2F

Lifecycle status
Discontinued
Description
Insulated Gate Bipolar Transistor, 294A I(C), 1200V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X7
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.25
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
7
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1100
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
180
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
480
Collector Current-Max (IC) (A)
294
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.4
Collector-emitter Voltage-Max (V)
1200