2A100HB12C1U by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG 2A100HB12C1U

Lifecycle status
Contact Mfr
Description
High Reliability IGBT Modules IC
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XUFM-X7
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.4
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
7
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
555
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
300
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
495
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.45
Collector-emitter Voltage-Max (V)
1200