1HN04CH
ONSEMI
- Lifecycle statusActive
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 0.27A I(D), 100V, 9.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
- JEDEC-95 CodeTO-236
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)0.6
- Drain Current-Max (ID) (A)0.27
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)100
- Feedback Cap-Max (Crss) (pF)0.9
- Operating Temperature-Max (Cel)150
- Pulsed Drain Current-Max (IDM) (A)1.08
- Drain-source On Resistance-Max (ohm)9.8
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1HN04CH