100GXHH22
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionRectifier Diode, 1 Phase, 1 Element, 100A, 4500V V(RRM), Silicon
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.10.00.80
- SB Code8541.10.00.80
- Diode TypeRECTIFIER DIODE
- ApplicationFAST RECOVERY
- JESD-30 CodeO-CEDB-N2
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormNO LEAD
- Number of Phases1
- Terminal PositionEND
- Number of Elements1
- Output Current-Max100 A
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Diode Element MaterialSILICON
- Operating Temperature-Max125 Cel
- Operating Temperature-Min-40 Cel
- Reverse Recovery Time-Max5.5 us
- Rep Pk Reverse Voltage-Max4500 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Non-rep Pk Forward Current-Max2200 A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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100GXHH22