RF Power Field-Effect Transistors

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor

RF Power Field-Effect Transistor

RF Power Field-Effect Transistor

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Junction FET

RF Power Field-Effect Transistor

RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

RF Power Field-Effect Transistor

70-W; 0.5-3.0 GHz; GaN HEMT

10-W RF Power GaN HEMT

10W, GAN HEMT, 28V, DC-4.0GHZ, P

GAN HEMT 28V 35W DC-4.0GHZ PILL

240-W; 1800 – 2300-MHz; GaN HEMT for WCDMA; LTE; WiMAX

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET

RF MOSFET HEMT 28V 440166

120W, GAN HEMT, 28V, DC-3.0GHZ,

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET

60-W; DC to 2700-MHz; 50-V; GaN HEMT for LTE and Pulse-Radar Applications

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET