RF Power Field-Effect Transistors

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

RF TRANS PNP 25V 2.5GHZ TO72

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

FIVE NPN TRANSISTOR ARRAY

25-W RF Power GaN HEMT

RF MOSFET HEMT 28V 440193

45W, GAN HEMT, 28V, DC-4.0GHZ, P

120W GAN HEMT 28V 4.0GHZ G2

120-W; 2300 – 2700-MHz; GaN HEMT for WiMAX and LTE

RF MOSFET HEMT 28V 440166

10-W RF Power GaN HEMT

RF MOSFET HEMT 28V 440193

45-W RF Power GaN HEMT

10 W; C-band; Unmatched; GaN HEMT

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET

30-W; 6.0-GHz; GaN HEMT Die

100-W; DC CGHV40100 3-GHz; 50-V; GaN HEMT

200-W RF Power GaN HEMT

30 W; DC - 6.0 GHz; GaN HEMT

30 W; DC - 6.0 GHz; GaN HEMT

RF Power Field-Effect Transistor, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET

250-W; 1200 – 1400-MHz; GaN HEMT for L-Band Radar Systems