RF Power Field-Effect Transistors

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

CA3045 - RF SMALL SIGNAL BIPOLAR

RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET

GAN HEMT 28V 1.8-2.1GHZ

240-W; 1800 – 2300-MHz; GaN HEMT for WCDMA; LTE; WiMAX

60-W; 3300 – 3600-MHz; 28-V; GaN HEMT for WiMAX

RF MOSFET HEMT 28V 440193

15-W; 3300 – 3900-MHz; 28-V; GaN HEMT for WiMAX

RF MOSFET HEMT 28V 440109

6-W RF Power GaN HEMT

RF Power Field-Effect Transistor

RF Power Field-Effect Transistor

350W, GAN HEMT, 50V, 5.2-5.9GHZ,

RF MOSFET HEMT 50V 440166

75-W; 6.0-GHZ; GAN HEMT DIE

RF MOSFET HEMT 40V 440210

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Junction FET

120-W; RF Power GaN HEMT

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET