Insulated Gate Bipolar Transistors

Part NumberDescriptionSupplier AvailabilityPrice Range
IGBT WITH RECOVERY DIODE
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$1.00737
$1.03420
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Insulated Gate Bipolar Transistor, 21A I(C), 450V V(BR)CES, N-Channel, TO-252AA
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Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247
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Insulated Gate Bipolar Transistor, 10A I(C), 390V V(BR)CES, N-Channel, TO-263AB
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Insulated Gate Bipolar Transistor
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Insulated Gate Bipolar Transistor, 46A I(C), 360V V(BR)CES, N-Channel, TO-263AB
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Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel
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Insulated Gate Bipolar Transistor
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Insulated Gate Bipolar Transistor
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DISC IGBT XPT-GENX3 TO-263D2
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Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel
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IGBT Transistors igbt modules ixa30rg1200dhg-tr
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IGBT, IXBH14N300HV, Littelfuse BiMOSFETs is a component in which the strengths of MOSFETs and IGBTs are combined.This high-voltage device is ideal for parallel operation due to the positive temperature coefficient of the saturation voltage and the forward voltage drop of the inner diode. In addition, this "free" intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current when the device is turned off and preventing high Ldi/dt voltage transients from damaging the device. Features High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity Easy to mount Applications Switched-mode and resonant-mode power supplies Uninterruptible Power Supplies (UPS) Laser and X-ray generators Capacitor discharge circuits High voltage pulser circuits High voltage test equipment AC switches
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Insulated Gate Bipolar Transistor, 20A I(C), 1400V V(BR)CES, N-Channel, TO-247AD
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IGBT Transistors igbt bimsft-very hivolt
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Insulated Gate Bipolar Transistor, 40A I(C), 1600V V(BR)CES, N-Channel, TO-247AD
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Insulated Gate Bipolar Transistor, 25A I(C), 1700V V(BR)CES, N-Channel, TO-268AA
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Insulated Gate Bipolar Transistor, 16A I(C), 1700V V(BR)CES, N-Channel, TO-268AA
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IGBT Transistors igbt npt-standard
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IGBT Transistors disc igbt npt-standard
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Insulated Gate Bipolar Transistor
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Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
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Insulated Gate Bipolar Transistor, 40A I(C), N-Channel, TO-220AB
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Insulated Gate Bipolar Transistor, 22A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
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IGBT 600V 56A 170W ISOPLUS247
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