ZXMS6008DN8-13
Diodes Incorporated
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- Description60V Dual N-Channel Self-Protected Enhancement Mode
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G8
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)1.67
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)60
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-40
- Avalanche Energy Rating (Eas) (mJ)210
- Pulsed Drain Current-Max (IDM) (A)1.8
- Drain-source On Resistance-Max (ohm)0.8
- Screening Level / Reference StandardAEC-Q101; IATF 16949
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ZXMS6008DN8-13
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ZXMS6008DN8-13