ZXMN10A08DN8TA by ZETEX PLC | Sourcengine

ZETEX PLC ZXMN10A08DN8TA

Lifecycle status
Transferred
RoHS
RoHS compliant
Description
Power Field-Effect Transistor, 2.1A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Matte Tin (Sn)
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1.8
Drain Current-Max (ID) (A)
2.1
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Pulsed Drain Current-Max (IDM) (A)
9
Drain-source On Resistance-Max (ohm)
0.25
Time@Peak Reflow Temperature-Max (s)
40