ZVP4525GQTA
Diodes Incorporated
- Lifecycle statusActive
- RoHSRoHS compliant
- Description250V P-Channel Enhancement Mode MOSFET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishMATTE TIN
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)2
- Drain Current-Max (ID) (A)0.265
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)250
- Feedback Cap-Max (Crss) (pF)5
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Pulsed Drain Current-Max (IDM) (A)1
- Drain-source On Resistance-Max (ohm)0.014
- Screening Level / Reference StandardAEC-Q101; IATF 16949
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