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WEDPN16M64V-125BI

Microsemi Corporation

Microsemi Corporation WEDPN16M64V-125BI
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.32
  • SB Code
    8542.32.00.15
  • Technology
    CMOS
  • Access Mode
    FOUR BANK PAGE BURST
  • JESD-30 Code
    S-PBGA-B219
  • Memory Width
    64
  • Package Code
    BGA
  • Self Refresh
    YES
  • Package Shape
    SQUARE
  • Package Style
    GRID ARRAY Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory IC Type
    SYNCHRONOUS DRAM MODULE
  • Operating Mode
    SYNCHRONOUS
  • Number of Ports
    1
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    INDUSTRIAL
  • Terminal Position
    BOTTOM
  • Additional Feature
    AUTO/SELF REFRESH
  • Memory Organization
    16MX64
  • Number of Functions
    1
  • Number of Terminals
    219
  • Access Time-Max (ns)
    6
  • Number of Words Code
    16M
  • Memory Density (bits)
    1073741824
  • Package Body Material
    PLASTIC/EPOXY
  • Alternate Memory Width
    32
  • Supply Voltage-Max (V)
    3.6
  • Supply Voltage-Min (V)
    3
  • Supply Voltage-Nom (V)
    3.3
  • Number of Words (words)
    16777216
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -40
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED

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WEDPN16M64V-125BI