WED3DG649V10D2I
WHITE ELECTRONIC DESIGNS CORP
- Lifecycle statusTransferred
- DescriptionSynchronous DRAM Module, 8MX64, CMOS
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.28
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeFOUR BANK PAGE BURST
- JESD-30 CodeR-XDMA-N168
- Memory Width64
- Package CodeDIMM
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory IC TypeSYNCHRONOUS DRAM MODULE
- Operating ModeSYNCHRONOUS
- Refresh Cycles4096
- Number of Ports1
- DLA QualificationNot Qualified
- Temperature GradeINDUSTRIAL
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH
- Memory Organization8MX64
- Number of Functions1
- Number of Terminals168
- Terminal Pitch (mm)1.27
- Number of Words Code8M
- Memory Density (bits)536870912
- Package Body MaterialUNSPECIFIED
- Output Characteristics3-STATE
- Supply Voltage-Max (V)3.6
- Supply Voltage-Min (V)3
- Supply Voltage-Nom (V)3.3
- Number of Words (words)8388608
- Standby Current-Max (A)0.01
- Supply Current-Max (mA)760
- Package Equivalence CodeDIMM168
- Clock Frequency-Max (MHz)100
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
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WED3DG649V10D2I