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W7264M64V1110BI

Microsemi Corporation

Microsemi Corporation W7264M64V1110BI
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.51
  • SB Code
    8542.32.00.50
  • Type
    NOR TYPE
  • Ready/Busy
    YES
  • Technology
    CMOS
  • Toggle Bit
    YES
  • Data Polling
    YES
  • Memory Width
    64
  • Surface Mount
    YES
  • Memory IC Type
    FLASH
  • Parallel/Serial
    PARALLEL
  • DLA Qualification
    Not Qualified
  • Page Size (words)
    4
  • Temperature Grade
    INDUSTRIAL
  • Memory Organization
    128MX64
  • Number of Terminals
    179
  • Sector Size (words)
    128K
  • Access Time-Max (ns)
    110
  • Number of Words Code
    128M
  • Memory Density (bits)
    8589934592
  • Package Body Material
    PLASTIC/EPOXY
  • Command User Interface
    YES
  • Common Flash Interface
    YES
  • Number of Sectors/Size
    1K
  • Supply Voltage-Nom (V)
    3.3
  • Number of Words (words)
    134217728
  • Standby Current-Max (A)
    0.0004
  • Supply Current-Max (mA)
    400
  • Package Equivalence Code
    BGA179,12X15,40
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -40

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W7264M64V1110BI