W3J512M32K-1066B2I by Microsemi Corporation | Sourcengine

Microsemi Corporation W3J512M32K-1066B2I

Lifecycle status
Transferred
REACH
REACH compliant
Description
DDR3L DRAM, 512MX32, 0.3ns, CMOS, PBGA204
Category
Semiconductors Memory ICs DRAMs DDR3L DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
10.1
Access Mode
SINGLE BANK PAGE BURST
Length (mm)
14.6
JESD-30 Code
R-PBGA-B204
Memory Width
32
Package Code
FBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR3L DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED
Memory Organization
512MX32
Number of Functions
1
Number of Terminals
204
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
0.3
Number of Words Code
512M
Memory Density (bits)
17179869184
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
4.1
Supply Voltage-Max (V)
1.45
Supply Voltage-Min (V)
1.283
Supply Voltage-Nom (V)
1.35
Number of Words (words)
536870912
Sequential Burst Length
8
Standby Current-Max (A)
0.072
Supply Current-Max (mA)
760
Interleaved Burst Length
8
Package Equivalence Code
BGA204,12X17,32
Clock Frequency-Max (MHz)
533
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40