W3HG264M64EEU534AD4IGG
Microsemi Corporation
- Lifecycle statusTransferred
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionDDR DRAM Module, 128MX64, 0.5ns, CMOS, PDMA200
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDMA-N200
- Memory Width64
- Package CodeDIMM
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory IC TypeDDR DRAM MODULE
- Refresh Cycles8192
- DLA QualificationNot Qualified
- Temperature GradeINDUSTRIAL
- Terminal PositionDUAL
- Memory Organization128MX64
- Number of Terminals200
- Terminal Pitch (mm)0.6
- Access Time-Max (ns)0.5
- Number of Words Code128M
- Memory Density (bits)8589934592
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Supply Voltage-Nom (V)1.8
- Number of Words (words)134217728
- Standby Current-Max (A)0.112
- Supply Current-Max (mA)1216
- Package Equivalence CodeDIMM200,24
- Clock Frequency-Max (MHz)266
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
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W3HG264M64EEU534AD4IGG