W3H64M16E-667B2I
Microsemi Corporation
- Lifecycle statusTransferred
- REACHREACH compliant
- DescriptionDDR2 DRAM, 64MX16, 0.65ns, CMOS, PBGA79
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- TechnologyCMOS
- Width (mm)11.1
- Access ModeMULTI BANK PAGE BURST
- Length (mm)14.1
- JESD-30 CodeR-PBGA-B79
- Memory Width16
- Package CodeBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeDDR2 DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED
- Memory Organization64MX16
- Number of Functions1
- Number of Terminals79
- Terminal Pitch (mm)1.27
- Access Time-Max (ns)0.65
- Number of Words Code64M
- Memory Density (bits)1073741824
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)2.42
- Supply Voltage-Max (V)1.9
- Supply Voltage-Min (V)1.7
- Supply Voltage-Nom (V)1.8
- Number of Words (words)67108864
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
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W3H64M16E-667B2I