W3H264M16E-533B2C by Microsemi Corporation | Sourcengine

Microsemi Corporation W3H264M16E-533B2C

Lifecycle status
Transferred
REACH
REACH compliant
Description
DDR2 DRAM, 128MX16, 0.65ns, CMOS, PBGA79
Category
Semiconductors Memory ICs DRAMs DDR2 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
11.1
Access Mode
DUAL BANK PAGE BURST
Length (mm)
14.1
JESD-30 Code
R-PBGA-B79
Memory Width
16
Package Code
BGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR2 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED
Memory Organization
128MX16
Number of Functions
1
Number of Terminals
79
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
0.65
Number of Words Code
128M
Memory Density (bits)
2147483648
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
2.42
Supply Voltage-Max (V)
1.9
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
134217728
Sequential Burst Length
4,8
Standby Current-Max (A)
0.01
Supply Current-Max (mA)
260
Interleaved Burst Length
4,8
Package Equivalence Code
BGA79,8X10,50
Clock Frequency-Max (MHz)
533
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0