W3H128M64E2-400SBI
Microsemi Corporation
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionDDR2 DRAM, 128MX64, 0.6ns, CMOS, PBGA208
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- Width16.15 mm
- Length22.15 mm
- TechnologyCMOS
- Access ModeMULTI BANK PAGE BURST
- JESD-30 CodeR-PBGA-B60
- Memory Width64
- Organization128MX64
- Package CodeBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density8589934592 bit
- Memory IC TypeDDR2 DRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch1 mm
- Access Time-Max0.6 ns
- Number of Ports1
- Number of Words134217728 words
- Seated Height-Max5.15 mm
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH; LG-MAX; WD-MAX
- Number of Functions1
- Number of Terminals208
- Number of Words Code128M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Max (Vsup)1.9 V
- Supply Voltage-Min (Vsup)1.7 V
- Supply Voltage-Nom (Vsup)1.8 V
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W3H128M64E2-400SBI