W3EG6466S265BD4MG
Microsemi Corporation
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionDDR DRAM Module, 64MX64, 0.75ns, CMOS
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- TechnologyCMOS
- Access ModeDUAL BANK PAGE BURST
- JESD-30 CodeR-XDMA-N200
- Memory Width64
- Organization64MX64
- Package CodeDIMM
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density4294967296 bit
- Memory IC TypeDDR DRAM MODULE
- Operating ModeSYNCHRONOUS
- Access Time-Max0.75 ns
- Number of Ports1
- Number of Words67108864 words
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH
- Number of Functions1
- Number of Terminals200
- Number of Words Code64M
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)2.7 V
- Supply Voltage-Min (Vsup)2.3 V
- Supply Voltage-Nom (Vsup)2.5 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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W3EG6466S265BD4MG