W3E64M16S-200BC
Microsemi Corporation
- Lifecycle statusTransferred
- REACHREACH compliant
- DescriptionDDR1 DRAM, 64MX16, 0.8ns, CMOS, PBGA60
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- TechnologyCMOS
- Width (mm)10.1
- Access ModeFOUR BANK PAGE BURST
- Length (mm)12.6
- JESD-30 CodeR-PBGA-B60
- Memory Width16
- Package CodeFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeDDR1 DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Temperature GradeCOMMERCIAL
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED
- Memory Organization64MX16
- Number of Functions1
- Number of Terminals60
- Terminal Pitch (mm)0.8
- Access Time-Max (ns)0.8
- Number of Words Code64M
- Memory Density (bits)1073741824
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)2.31
- Supply Voltage-Max (V)2.7
- Supply Voltage-Min (V)2.3
- Supply Voltage-Nom (V)2.5
- Number of Words (words)67108864
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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W3E64M16S-200BC