W3DG6418V75D2ISG
Microsemi Corporation
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionSynchronous DRAM Module, 16MX64, CMOS
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- TechnologyCMOS
- Access ModeFOUR BANK PAGE BURST
- JESD-30 CodeR-XDMA-N168
- Memory Width64
- Organization16MX64
- Package CodeDIMM
- Self RefreshYES
- JESD-609 Codee4
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density1073741824 bit
- Memory IC TypeSYNCHRONOUS DRAM MODULE
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Number of Words16777216 words
- Terminal FinishGOLD
- Temperature GradeINDUSTRIAL
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH
- Number of Functions1
- Number of Terminals168
- Number of Words Code16M
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Max (Vsup)3.6 V
- Supply Voltage-Min (Vsup)3 V
- Supply Voltage-Nom (Vsup)3.3 V
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