W-IXFD12N100
IXYS Corporation
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-XUUC-N7
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals7
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- DS Breakdown Voltage-Min1000 V
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max1.05 ohm
0 suppliers available to buy or to bid for W-IXFD12N100
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
W-IXFD12N100
Send an RFQ
W-IXFD12N100