W-IXFD10N90-L
IXYS Corporation
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 900V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-XUUC-N7
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals7
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- DS Breakdown Voltage-Min900 V
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max1.1 ohm
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W-IXFD10N90-L